10 MeV proton damage in β-Ga2O3 Schottky rectifiers
نویسندگان
چکیده
منابع مشابه
InAs=InGaP=GaAs heterojunction power Schottky rectifiers
A low-temperature (LT) grown InAs epi-layer has been applied as the gate to the dual-material structure of lattice-matched InGaP on GaAs, to make a high-temperature power rectifier. The LT molecular beam epitaxy technique enables the formation of an abrupt interface between InAs and InGaP. This heterojunction rectifier utilises the strong thermal stability of the InAs=InGaP heterojunction and t...
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
سال: 2018
ISSN: 2166-2746,2166-2754
DOI: 10.1116/1.5013155